Paper Title:
Identification of Deep Level Defects in SiC Bipolar Junction Transistors
  Abstract

In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
567-570
DOI
10.4028/www.scientific.net/MSF.527-529.567
Citation
P. M. Lenahan, N.T. Pfeiffenberger, T.G. Pribicko, A. J. Lelis, "Identification of Deep Level Defects in SiC Bipolar Junction Transistors", Materials Science Forum, Vols. 527-529, pp. 567-570, 2006
Online since
October 2006
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$32.00
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