Paper Title:
Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance
  Abstract

In this work we used Positron Annihilation Spectroscopy (PAS) and Electron Paramagnetic Resonance (EPR) to investigate the properties of vacancy defects produced by low energy electron irradiation. N-doped 3C-SiC and 6H-SiC monocrystals have been irradiated with electrons at different energies from 240keV to 900keV. EPR measurements show that Frenkel pairs VSi 3-/Si are created in 6H-SiC when electron irradiation is performed at low energy (240-360 keV). EPR also indicates that the silicon displacement threshold energy is higher in 3C-SiC than in 6HSiC. Moreover, PAS results show that the size and concentration of the vacancy defects decrease when the electron energy decreases for both polytypes. PAS detects vacancy defects in 240keV electron irradiated 3C-SiC, and the detection of the carbon vacancy is proposed.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
571-574
DOI
10.4028/www.scientific.net/MSF.527-529.571
Citation
X. Kerbiriou, M. F. Barthe, S. Esnouf, P. Desgardin, G. Blondiaux, G. Petite, "Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance", Materials Science Forum, Vols. 527-529, pp. 571-574, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jung Doo Seo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku
Abstract:SiC single crystal ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was...
9
Authors: S. Shevchenko, A.N. Tereshchenko
Abstract:Dislocation photoluminescence (DPL) is studied at 4.2K in plastically deformed germanium single crystals containing predominantly 60fl...
583
Authors: Katarzyna Racka, Emil Tymicki, Marcin Raczkiewicz, Krzysztof Grasza, Michal Kozubal, Elzbieta Jurkiewicz-Wegner, Rafał Jakieła, Andrzej Brzozowski, Mariusz Pawłowski, Miroslaw Piersa, J. Sadło, Jerzy Krupka
Abstract:n- and p-type 6H-SiC single crystals grown by PVT method using different charge materials – poly-SiC sinter or fresh SiC powder – have been...
19
Authors: Akapong Phunpueok, Weerapong Chewpraditkul, Pichet Limsuwan, Chalerm Wanarak
Abstract:The luminescence and gamma-ray detection properties of cerium-doped scintillators, namely, Lu0.3Y0.7AlO3:Ce...
1789
Authors: Rajappan Radhakrishnan Sumathi, Matthias Paun
Chapter 1: Bulk Growth
Abstract:Growth of AlN single crystals using carbon-polar surface of SiC substrate by PVT growth method has been attempted. AlN growth on the...
99