Paper Title:
Electronic Raman Studies of Shallow Donors in Silicon Carbide
  Abstract

We study electronic Raman scattering of phosphorus and nitrogen doped silicon carbide (SiC) as a function of temperature in the range 7K < T < 300K. We observe a series of peaks in the Raman spectra which we assign to electronic transitions at nitrogen and phosphorus donors on different lattice sites. These transitions are identified as valley orbit transitions of the 1s donor ground state. From the polarization dependence of the observed peaks, we find that all electronic Raman signals have E2-symmetry of C6v for the hexagonal polytypes (6H-SiC and 4H-SiC) and E-symmetry of C3v for 15R-SiC. We find a reduction of the intensities of all valley-orbit Raman signals with increasing temperature and ascribe this reduction to the decreasing occupation of donor states.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
579-584
DOI
10.4028/www.scientific.net/MSF.527-529.579
Citation
R. Püsche, M. Hundhausen, L. Ley, K. Semmelroth, G. Pensl, P. Desperrier, P. J. Wellmann, E. E. Haller, J.W. Ager, U. Starke, "Electronic Raman Studies of Shallow Donors in Silicon Carbide", Materials Science Forum, Vols. 527-529, pp. 579-584, 2006
Online since
October 2006
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$32.00
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