Paper Title:
Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
  Abstract

New lines are observed in the photoluminescence of 6H and 4H SiC epitaxial layers grown in cold wall CVD reactors and doped with phosphorus. These lines are associated with neutral phosphorus donor four particle bound exciton complexes with the phosphorus substituting on both the carbon and silicon sublattices. Assignments are made for the (h) hexagonal and (k) cubic sites of the phosphorus donor substituting on the two SiC sublattices.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
585-588
DOI
10.4028/www.scientific.net/MSF.527-529.585
Citation
F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, I. Bhat, D. J. Larkin, "Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC", Materials Science Forum, Vols. 527-529, pp. 585-588, 2006
Online since
October 2006
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