Paper Title:
Photoluminescence of Phosphorous Doped SiC
  Abstract

We report the results of a photoluminescence (PL) study of n-type phosphorus-doped SiC epilayers. The PL spectra consist of a set of sharp lines that are interpreted as excitons bound to the P donor with zero-phonon lines which have photon energies very close to the nitrogen-bound excitons and followed by phonon assisted replicas.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
589-592
DOI
10.4028/www.scientific.net/MSF.527-529.589
Citation
A. Henry, E. Janzén, "Photoluminescence of Phosphorous Doped SiC", Materials Science Forum, Vols. 527-529, pp. 589-592, 2006
Online since
October 2006
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