Paper Title:
Shallow P Donors in 3C-, 4H- and 6H-SiC
  Abstract

EPR spectra originating from phosphorus shallow donors occupying silicon sites in 3C-, 4H-, and 6H-SiC are identified by using CVD grown films in which the interference from the signals from the nitrogen shallow donors is practically absent. Phosphorus donors occupying both silicon and carbon sites are observed in high-energy phosphorus ion implanted semi-insulating 6H-SiC which was also free from the interference from the signals from the nitrogen shallow donors.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
593-596
DOI
10.4028/www.scientific.net/MSF.527-529.593
Citation
J. Isoya, M. Katagiri, T. Umeda, N. T. Son, A. Henry, A. Gali, N. Morishita, T. Ohshima, H. Itoh, E. Janzén, "Shallow P Donors in 3C-, 4H- and 6H-SiC", Materials Science Forum, Vols. 527-529, pp. 593-596, 2006
Online since
October 2006
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$32.00
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