Paper Title:
A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers
  Abstract

Ab initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical vapor deposited (CVD) SiC layers. CVD conditions have been simulated by using the appropriate chemical potentials for hydrogen and phosphorus (P). We found that the most abundant defect is P at Si-site followed by P at C-site. The calculated concentrations of the P-donors and free carriers in CVD grown SiC agree with the experimental results.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
605-608
DOI
10.4028/www.scientific.net/MSF.527-529.605
Citation
T. Hornos, A. Gali, R. P. Devaty, W. J. Choyke, "A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers", Materials Science Forum, Vols. 527-529, pp. 605-608, 2006
Online since
October 2006
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