Paper Title:
Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC
  Abstract

The accuracy of Secondary Ion Mass Spectrometry (SIMS) depth profiles of aluminum (Al) dopant in silicon carbide (SiC) has been investigated. The Al SIMS profile differs in shape depending on whether it was obtained using a cesium (Cs+) or oxygen (O2 +) primary ion beam, and depends in the former case on which secondary ion is followed. The matrix signals indicate that the CsAl+ secondary ion yield changes during the Cs+ depth profile, probably because of the work function lowering due to the previously-implanted Al. These same matrix ion signals are used for a depth-dependent empirical correction to increase the accuracy of the Al concentration profile. The physics of these phenomena and the accuracy of the correction are discussed.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
629-632
DOI
10.4028/www.scientific.net/MSF.527-529.629
Citation
H. E. Smith, B. H. Tsao, J. D. Scofield, "Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC", Materials Science Forum, Vols. 527-529, pp. 629-632, 2006
Online since
October 2006
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Price
$32.00
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