Paper Title:
Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
655-658
DOI
10.4028/www.scientific.net/MSF.527-529.655
Citation
U. Gerstmann, E. Rauls, S. Sanna, T. Frauenheim, H. Overhof, "Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?", Materials Science Forum, Vols. 527-529, pp. 655-658, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Ekaterina N. Kalabukhova, S.N. Lukin, D.V. Savchenko, W.C. Mitchel, William D. Mitchell
501
Authors: Uwe Gerstmann, E. Rauls, Siegmund Greulich-Weber, Ekaterina N. Kalabukhova, D.V. Savchenko, Andreas Pöppl, Francesco Mauri
Abstract:The microscopic origin of the Nx EPR-lines observed in heavily nitrogen doped 4H-SiC and 6H-SiC is discussed with the help of EPR parameters...
391
Authors: Uwe Gerstmann, Siegmund Greulich-Weber, E. Rauls, Johann Martin Spaeth, Ekaterina N. Kalabukhova, E.N. Mokhov, Francesco Mauri
Abstract:Scandium can be used to influence the stoichiometry of SiC during growth of the hexagonal polytypes. Using PL-EPR and total energy...
469
Authors: Nguyen Tien Son, Viktor Ivády, Adam Gali, Andreas Gällström, Stefano Leone, Olof Kordina, Erik Janzén
Chapter 3: Physical Properties and Characterization of SiC
Abstract:In unintentionally Nb-doped 4H-SiC grown by high-temperature chemical vapor deposition (HTCVD), an electron paramagnetic resonance (EPR)...
217
Authors: Xuan Thang Trinh, Andreas Gällström, Nguyen Tien Son, Stefano Leone, Olle Kordina, Erik Janzén
Chapter 5: Characterization of Material and Point Defects
Abstract:Defects in unintentionally Nb-doped 6H-SiC grown by high-temperature chemical vapor deposition were studied by electron paramagnetic...
385