Paper Title:
SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)
  Abstract

The morphology and atomic structure of 4H-SiC(1102) and 4H-SiC(1102) surfaces, i.e. the surfaces found in the triangular channels of porous 4H-SiC, have been investigated using AFM, LEED and AES. After hydrogen etching the surfaces show steps parallel and perpendicular to the caxis, yet drastically different morphologies for the two isomorphic orientations. Both surfaces immediately display a sharp LEED pattern. Together with the presence of oxygen in the AES spectra this indicates the development of an ordered oxide. Both surfaces show an oxygen free, well ordered surface after Si deposition and annealing.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
677-680
DOI
10.4028/www.scientific.net/MSF.527-529.677
Citation
U. Starke, W.Y. Lee, C. Coletti, S. E. Saddow, R. P. Devaty, W. J. Choyke, "SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)", Materials Science Forum, Vols. 527-529, pp. 677-680, 2006
Online since
October 2006
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Price
$32.00
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