Paper Title:
Phonons in SiC from INS, IXS, and Ab-Initio Calculations
  Abstract

Preliminary results for the phonon dispersion curves of hexagonal 4H-SiC from experimental inelastic neutron (INS) and X-ray scattering (IXS) are reported and contrasted with those of cubic 3C-SiC and silicon. The experimental frequencies and scattering intensities are in excellent agreement with those from first-principles calculations using density-functional methods. The relative merits of the two experimental techniques and aspects of the density functional perturbation theory and the so-called frozen phonon method for the determination of the basic phonon properties are briefly outlined.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
689-694
DOI
10.4028/www.scientific.net/MSF.527-529.689
Citation
D. Strauch, B. Dorner, A.A. Ivanov, M. Krisch, J. Serrano , A. Bosak, W. J. Choyke, B. Stojetz, M. Malorny, "Phonons in SiC from INS, IXS, and Ab-Initio Calculations", Materials Science Forum, Vols. 527-529, pp. 689-694, 2006
Online since
October 2006
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Price
$32.00
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