Paper Title:
Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition
  Abstract

We have performed a combined investigation of experiment and theory on the infrared reflectance from cubic SiC grown on Si by chemical vapor deposition. A damping behavior of the interference fringes away from the reststrahlen band and a dip or notch within the “flat top” are observed from some samples while they does not occur in high quality 3C-SiC/Si samples. The former is interpreted due to an interfacial transition layer existed between SiC-Si and a rough surface, while the latter can be demonstrated by a three-component effective medium model.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
695-698
DOI
10.4028/www.scientific.net/MSF.527-529.695
Citation
Z. C. Feng, C.W. Huang, W.Y. Chang, J. Zhao, C. C. Tin, W. J. Lu, W.E. Collins, "Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition", Materials Science Forum, Vols. 527-529, pp. 695-698, 2006
Online since
October 2006
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