Paper Title:
Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping
  Abstract

SiC substrates produced at II-VI, Inc. have been characterized using x-ray rocking curve mapping (topography). The rocking curves have been measured in the -scan mode for the (0006) Bragg reflection of 6H and the (0004) reflection of 4H SiC substrates. The maps contain information extracted from the rocking curves, such as the peak angle () and the rocking curve broadening (FWHM). In the case when lattice distortion is present due to the elastic or plastic deformation, the peak angle () changes gradually upon scanning, with the d/dx gradient proportional to the lattice curvature in the plane of diffraction. Multi-peak reflections and/or sharp change in the value of  indicate the presence of misoriented grains. X-ray rocking curve mapping of SiC substrates yields excellent measures of crystalline quality that contain important information on the lattice strain and sub-grain misorientation.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
729-732
DOI
10.4028/www.scientific.net/MSF.527-529.729
Citation
M. Yoganathan, E. Emorhokpor, T. Kerr, A. Gupta, C.D. Tanner, I. Zwieback, "Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping", Materials Science Forum, Vols. 527-529, pp. 729-732, 2006
Online since
October 2006
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$32.00
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