Paper Title:
Microwave Dielectric Loss Characterization of Silicon Carbide Wafers
  Abstract

Semi-insulating silicon carbide (SiC) wafers are important as substrates for high frequency devices such as AlGaN-GaN HEMT’s. A nondestructive characterization technique has been developed to measure the dielectric properties of SiC wafers in the GHz frequency range where the devices will operate in order to validate wafers for high yield working devices. The dielectric loss is measured at approximately 16 GHz in a split microwave cavity. Initial results show a correlation where the dielectric loss decreases as the resistivity increases, where the resistivity was measured using a Contactless Resistivity Mapping system (COREMA). The uniformity of dielectric loss across SiC wafers was evaluated using a split post dielectric resonator cavity fixed at 5.5GHz to measure the dielectric loss at five points on a wafer. Dielectric loss as a function of temperature from room temperature to 400°C was also studied.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
733-736
DOI
10.4028/www.scientific.net/MSF.527-529.733
Citation
T. Bogart, W.J. Everson, R. D. Gamble, E. Oslosky, D. Snyder, E. Furman, S. Perini, M. Lanagan, "Microwave Dielectric Loss Characterization of Silicon Carbide Wafers", Materials Science Forum, Vols. 527-529, pp. 733-736, 2006
Online since
October 2006
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Price
$35.00
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