Paper Title:
Columnar Pore Growth in n-Type 6H SiC
  Abstract

A hybrid columnar and dendritic porous structure has been developed in n-type 6H SiC using photoelectrochemical etching with proper control of the applied voltage and current density. The diameter of the formed columnar pores is around 200-500 nm. A possible formation mechanism due to the spatial distribution of holes and the HF concentration gradient in the pores is proposed. A self-supporting film with this morphology is a promising candidate for protein dialysis.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
739-742
DOI
10.4028/www.scientific.net/MSF.527-529.739
Citation
Y. Ke, F. Yan, R. P. Devaty, W. J. Choyke, "Columnar Pore Growth in n-Type 6H SiC", Materials Science Forum, Vols. 527-529, pp. 739-742, 2006
Online since
October 2006
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