Paper Title:
Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVD
  Abstract

A selective atmospheric pressure chemical vapor deposition (APCVD) process has been developed to deposit porous polycrystalline silicon carbide (poly-SiC) thin films containing a high density of through-pores measuring 50 to 70 nm in diameter. The selective deposition process involves the formation of poly-SiC films on patterned SiO2/polysilicon thin film multilayers using a carbonization-based 3C-SiC growth process. This technique capitalizes on significant differences in the nucleation of poly-SiC on SiO2 and polysilicon surfaces in order to form mechanically-durable, chemically-stable, and well anchored porous structures, thus offering a simple and potentially more versatile alternative to direct electrochemical etching.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
755-758
DOI
10.4028/www.scientific.net/MSF.527-529.755
Citation
L. Chen, X. A. Fu, C. A. Zorman, M. Mehregany, "Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVD", Materials Science Forum, Vols. 527-529, pp. 755-758, 2006
Online since
October 2006
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Price
$32.00
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