Paper Title:
Ion Implantation Processing and Related Effects in SiC
  Abstract

A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p+-doped layers, and deactivation of N donors by ion-induced defects.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
781-786
DOI
10.4028/www.scientific.net/MSF.527-529.781
Citation
B. G. Svensson, A. Hallén, J. Wong-Leung, M. S. Janson, M. K. Linnarsson, A. Y. Kuznetsov, G. Alfieri, U. Grossner, E. V. Monakhov, H. K.-Nielsen, C. Jagadish, J. Grillenberger, "Ion Implantation Processing and Related Effects in SiC", Materials Science Forum, Vols. 527-529, pp. 781-786, 2006
Online since
October 2006
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Price
$32.00
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