Paper Title:
Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices
  Abstract

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Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
787-790
DOI
10.4028/www.scientific.net/MSF.527-529.787
Citation
M. Buzzo, M. Ciappa, M. Treu, W. Fichtner, "Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices", Materials Science Forum, Vols. 527-529, pp. 787-790, 2006
Online since
October 2006
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Price
$32.00
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