Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment

Nishizawa, Shinichi; Senzaki, Junji; Harada, Shinsuke; Okamoto, Mitsuo; Fukuda, Kenji; Kinoshita, Akimasa; Katou, Makoto; Morigasa, Fukuyoshi; Endou, Tomoyoshi; Isii, Takuo; Yashima, Teruyuki

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Paper Titles

Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices, p.787
Annealing Behavior of N⁺-Implantation-Induced Defects in SiC at Low Temperatures, p.791
Impact of Annealing Temperature Ramps on the Electrical Activation of N⁺ and P⁺ Co-Implanted SiC Layers, p.795
Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20), p.799
Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment, p.803
Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing, p.807
Correlation between Current Transport and Defects in n⁺/p 6H-SiC Diodes, p.811
Current Analysis of Ion Implanted p⁺/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient, p.815
Ion Implanted p⁺/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor, p.819

Home > Materials Science Forum > Silicon Carbide and Related Materials 2005 > Activation Treatment of Ion Implanted Dopants...

Paper Title:

Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment

Periodical	Materials Science Forum (Volumes 527 - 529)
Main Theme	Silicon Carbide and Related Materials 2005
Edited by	Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages	803-806
DOI	10.4028/www.scientific.net/MSF.527-529.803
Citation	Akimasa Kinoshita et al., 2006, Materials Science Forum, 527-529, 803
Online since	October, 2006
Authors	Akimasa Kinoshita, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamoto, Shinichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima
Keywords	Hybrid Super Rapid Thermal Annealing (HS-RTA), N-Type Activation
Price	US$ 28,-

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Abstract

We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipment consists of an infrared annealing unit and a RF induction annealing unit in order to uniformly anneal over 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature is elevated from RT to peak temperature (~1800°C) for less than 1 min, remain stable at annealing temperature for 30s and falls from peak temperature to 1000°C within less than 20s. The temperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C, 1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples are used to evaluate the performance of the HS-RTA equipment. The five implanted samples placed on the 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheet resistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/􀀀, 82.6Ω/􀀀 and 75.5Ω/􀀀, respectively. The sheet resistance uniformities are 9.9%, 7.9% and 9.3%. The average roughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra values of the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm, respectively.