Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing

Satoh, Masataka; Watanabe, Fumio; Miura, Kuniaki; Suzuki, Tomoyuki; Shibagaki, Masami; Kurematsu, Yasumi; Haga, Shigetaka; Miyagawa, Shohei; Numajiri, Kenji

Paper Titles

Annealing Behavior of N⁺-Implantation-Induced Defects in SiC at Low Temperatures, p.791
Impact of Annealing Temperature Ramps on the Electrical Activation of N⁺ and P⁺ Co-Implanted SiC Layers, p.795
Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20), p.799
Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment, p.803
Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing, p.807
Correlation between Current Transport and Defects in n⁺/p 6H-SiC Diodes, p.811
Current Analysis of Ion Implanted p⁺/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient, p.815
Ion Implanted p⁺/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor, p.819
Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes, p.823

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Paper Title:

Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing

Periodical	Materials Science Forum (Volumes 527 - 529)
Main Theme	Silicon Carbide and Related Materials 2005
Edited by	Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages	807-810
DOI	10.4028/www.scientific.net/MSF.527-529.807
Citation	Masami Shibagaki et al., 2006, Materials Science Forum, 527-529, 807
Online since	October, 2006
Authors	Masami Shibagaki, Masataka Satoh, Yasumi Kurematsu, Kenji Numajiri, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Tomoyuki Suzuki, Shohei Miyagawa
Keywords	EBAS, Non-Uniformity, Post Implantation Annealing, RTP, Sheet Resistance, Surface Morphology, Vacuum
Price	US$ 28,-

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Abstract

We developed EBAS-100, which is available to 100 mm diameter SiC wafer, for post ion implantation annealing in order to realize silicon carbide (SiC) device with large volume production. EBAS-100 is able to perform the rapid thermal process due to the vacuum thermal insulation and small heat capacity of susceptor. Electrical power consumption density was 18.8 Wh/cm2 for EBAS-100, which is one-third smaller than that of our previous system (EBAS-50). Samples used in this study were p-type epitaxial 4H-SiC (0001) grown on 8o off SiC substrate. P+ ions (total dose; 2.0 x 1016 /cm2, thickness; 350 nm) were implanted into SiC samples at 500 oC. The root-mean-square (RMS) of surface roughness is estimated to be 0.21 nm for the sample annealed at 1700 oC for 5 min, which is much smooth than that of the sample annealed by the conventional RF inductive annealing (RMS value: 5.97 nm). Averaged sheet resistance (RS) value of 63.3 ohm/sq. is obtained with the excellent non-uniformity of RS (+/- 1.4 %) for the diameter of 76.0 mm.