We developed EBAS-100, which is available to 100 mm diameter SiC wafer, for post ion implantation annealing in order to realize silicon carbide (SiC) device with large volume production. EBAS-100 is able to perform the rapid thermal process due to the vacuum thermal insulation and small heat capacity of susceptor. Electrical power consumption density was 18.8 Wh/cm2 for EBAS-100, which is one-third smaller than that of our previous system (EBAS-50). Samples used in this study were p-type epitaxial 4H-SiC (0001) grown on 8o off SiC substrate. P+ ions (total dose; 2.0 x 1016 /cm2, thickness; 350 nm) were implanted into SiC samples at 500 oC. The root-mean-square (RMS) of surface roughness is estimated to be 0.21 nm for the sample annealed at 1700 oC for 5 min, which is much smooth than that of the sample annealed by the conventional RF inductive annealing (RMS value: 5.97 nm). Averaged sheet resistance (RS) value of 63.3 ohm/sq. is obtained with the excellent non-uniformity of RS (+/- 1.4 %) for the diameter of 76.0 mm.