Paper Title:
Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes
  Abstract

This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature annealing (1300 °C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
811-814
DOI
10.4028/www.scientific.net/MSF.527-529.811
Citation
M. Canino, A. Castaldini, A. Cavallini, F. Moscatelli, R. Nipoti, A. Poggi, "Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes", Materials Science Forum, Vols. 527-529, pp. 811-814, 2006
Online since
October 2006
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Price
$32.00
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