Paper Title:
High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design
  Abstract

SiC single crystal ingots grown by sublimation physical vapor transport (PVT) technique were prepared and then the SiC crystal quality with varying crucible design employing a guide tube and tantalum foil was systematically investigated. The growth rate of 2-inch SiC crystal grown by these crucible designs was about 0.3 mm/hr. The n-type and p-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated. The doping concentration level of below ~1017/cm3 was extracted from the absorption spectrum and Hall measurement. The densities of micropipes and inclusions in SiC crystal boules grown using the graphite/Ta foil double layer guide tube were significantly decreased. Finally we improved crystal quality through the introduction of new crucible design.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
83-86
DOI
10.4028/www.scientific.net/MSF.527-529.83
Citation
K. R. Ku, J. K. Kim, J. D. Seo, J. Y. Lee, M. O. Kyun, W. J. Lee, G. H. Lee, I. S. Kim, B. C. Shin, "High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design", Materials Science Forum, Vols. 527-529, pp. 83-86, 2006
Online since
October 2006
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Price
$32.00
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