Paper Title:
Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
  Abstract

Post-implant annealing of Al implanted 4H-SiC has been performed in the temperature range from 1600°C to 1750°C. Annealing was conducted in a hot-wall CVD reactor using a silanerich ambient. Ar was used as the carrier gas to deliver the silane to the annealing zone where the sample was heated via RF induction. The resulting annealed surfaces exhibited a step-bunch free, smooth morphology when viewed on SEM and AFM. The maximum surface roughness as measured via AFM was 0.65 nm RMS for the sample annealed at 1750°C.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
839-842
DOI
10.4028/www.scientific.net/MSF.527-529.839
Citation
S. P. Rao, F. Bergamini, R. Nipoti, A.M. Hoff, E. Oborina, S. E. Saddow, "Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD", Materials Science Forum, Vols. 527-529, pp. 839-842, 2006
Online since
October 2006
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