Paper Title:
Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes
  Abstract

It is investigated whether the homogeneous depth profiles of epitaxially doped B or Al are changed or preserved by implantation of various implanted species and annealing processes. We have found a strong decrease in the atomic B concentration in epitaxially B-doped layers after implantation of N+, Al+, and P+ and subsequent annealing at 1700 °C. On the other hand, the Al profiles in epitaxially Al-doped layers are preserved after the same processes.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
843-846
DOI
10.4028/www.scientific.net/MSF.527-529.843
Citation
Y. Negoro, T. Kimoto, H. Matsunami, G. Pensl, "Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes", Materials Science Forum, Vols. 527-529, pp. 843-846, 2006
Online since
October 2006
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