Paper Title:
Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence
  Abstract

4H-SiC samples implanted at 600°C with 1020 cm-3 of B or B and C to a depth of ~0.5 μm, capped with (BN/AlN), and annealed at temperatures ranging from 1400°C – 1700°C were studied using variable temperature cathodoluminescence. New emission lines, which may be associated with stacking faults, were observed in the samples co-implanted with B and C, but not in the samples implanted only with B. For both the B and B and C co-implanted samples, the intensity of the line near 3.0 eV decreases with increasing annealing temperature, TA, and this line is not observed after annealing at 1700°C. The D1 defect related emission lines are observed in the luminescence spectra of all samples and their relative intensities seem to vary with the implantation-annealing schedule and excitation conditions.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
847-850
DOI
10.4028/www.scientific.net/MSF.527-529.847
Citation
J. A. Freitas, K. A. Jones, M. A. Derenge, R.D. Vispute, S. S. Hullavarad, "Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence", Materials Science Forum, Vols. 527-529, pp. 847-850, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Kuriyama, K. Matsumoto, M. Ooi, K. Kushida
Abstract:Multiple-energy nitrogen ions (energies:1 to 100 keV and a net concentration:2.24 x 1020 cm-3) are implanted into ZnO bulk single crystals...
1361
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427