Paper Title:
High Dose High Temperature Ion Implantation of Ge into 4H-SiC
| Periodical | Materials Science Forum (Volumes 527 - 529) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 851-854 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.851 |
| Citation | Thomas Kups et al., 2006, Materials Science Forum, 527-529, 851 |
| Online since | October, 2006 |
| Authors | Thomas Kups, Petia Weih, M. Voelskow, Wolfgang Skorupa, Jörg Pezoldt |
| Keywords | 4H-SiC, Ge, Ion Implantation, Solid Solution, TEM |
| Price | US$ 28,- |
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Abstract
A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.
