Paper Title:
High Dose High Temperature Ion Implantation of Ge into 4H-SiC
  Abstract

A box like Ge distribution was formed by ion implantation at 600°C. The Ge concentration was varied from 1 to 20 %. The TEM investigations revealed an increasing damage formation with increasing implantation dose. No polytype inclusions were observed in the implanted regions. A detailed analysis showed different types of lattice distortion identified as insertion stacking faults. The lattice site location analysis by “atomic location by channelling enhanced microanalysis” revealed that the implanted Ge is mainly located at interstitial positions.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
851-854
DOI
10.4028/www.scientific.net/MSF.527-529.851
Citation
T. Kups, P. Weih, M. Voelskow, W. Skorupa, J. Pezoldt, "High Dose High Temperature Ion Implantation of Ge into 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 851-854, 2006
Online since
October 2006
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