Paper Title:
An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts
  Abstract

While nickel ohmic contacts to n-type silicon carbide have good electrical properties, the physical contact, and therefore the reliability, can be poor. An approach is described for using the good electrical properties of Ni ohmic contacts while using another metal for its desired mechanical, thermal and/or chemical properties. In the present work, once the Ni contacts have been annealed forming nickel silicides and achieving low contact resistance, they are etched off. Removing the primary Ni contacts also eliminates the poor morphology, voids, and at least some of the excess carbon produced by the Ni/SiC reaction. The Ni contacts are then replaced by a second contact metal. This second metal displays low contact resistance as-deposited, indicating that the critical feature responsible for the ohmic contact has not been removed by the primary contact etch. Not only does this approach provide more flexibility for optimizing the contact for a given application, it also provides some insight into the ohmic contact formation mechanism.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
859-862
DOI
10.4028/www.scientific.net/MSF.527-529.859
Citation
M. H. Ervin, K. A. Jones, U. C. Lee, T. Das, M.C. Wood, "An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts", Materials Science Forum, Vols. 527-529, pp. 859-862, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Surina Othman, F.K. Yam, Abu Hassan Haslan, Hassan Zainuriah
Abstract:In this study, we investigated the contact characteristics of bi-layer thin films, Ag (200nm)/Ti (100nm) on Si-doped n-type Al0.27Ga0.73N...
281
Authors: Anne Elisabeth Bazin, Thierry Chassagne, Jean François Michaud, André Leycuras, Marc Portail, Marcin Zielinski, Emmanuel Collard, Daniel Alquier
Abstract:In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different...
721
Authors: A. Hürner, T. Schlegl, B. Adelmann, H. Mitlehner, R. Hellmann, A.J. Bauer, L. Frey
Chapter 9: Processing Diverse
Abstract:In this study, we present the results of alloying nickel as ohmic contact material to n-type 4H-SiC via a continuous wave fiber laser with...
773
Authors: Katarina Smedfors, Carl Mikael Zetterling, Mikael Östling
Chapter III: Processing of SiC
Abstract:Ohmic CoSi2 contacts to n-type 4H-SiC showing low contact resistance have been made by sputter depositing sequential layers of Si...
440