Paper Title:
Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation
  Abstract

The characteristics of Ni, Monel (Ni-Cu alloy, Ni55mol%-Cu45mol%), Monel/Si, Ni/Ti/Ni and Mo electrodes were studied for ohmic contact to C-face N-type 4H-SiC. Low contact resistivity (ρC) was not compatible with reduction of graphite precipitation in the case of Ni, Monel, Ni/Ti/Ni, and Mo electrodes. Monel/Si achieved less graphite precipitation and low ρC, which is enough to apply for actual rectifier, because a Monel/Si electrode forms a silicide without reaction between the deposits and the substrate.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
867-870
DOI
10.4028/www.scientific.net/MSF.527-529.867
Citation
Y. Maeyama, K. Nishikawa, Y. Fukuda, M. Shimizu, M. Sato, J. Ono, H. Iwakuro, "Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation", Materials Science Forum, Vols. 527-529, pp. 867-870, 2006
Online since
October 2006
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Price
$32.00
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