Paper Title:
Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth
  Abstract

Silicon carbide crystals were grown from the vapor. Improvement of the quality of the central part of the crystal was achieved by optimization of the geometry of the source material. Active thermal interaction of the source material and the crystallization front made possible an effective programming of the shape and morphology of the crystal. Termination of micropipes on microfacets formed on the crystallization front during growth was observed.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
87-90
DOI
10.4028/www.scientific.net/MSF.527-529.87
Citation
K. Grasza, E. Tymicki, J. Kisielewski, "Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth", Materials Science Forum, Vols. 527-529, pp. 87-90, 2006
Online since
October 2006
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Price
$32.00
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