Paper Title:
Composite Ohmic Contacts to SiC
  Abstract

Composite ohmic contacts designed for SiC devices operating in air at 350°C have been studied. Ohmic contacts to n- and p-4H-SiC were protected against inter-diffusion and oxidation by Ta-Si-N layers obtained by sputter deposition from a TaSi2 target in a mixture of Ar and N2. Platinum was sputter-deposited at 250°C to promote adhesion between the Ta-Si- N barrier layer and a thick Au cap layer. Platinum also acts as a barrier to the diffusion of Au. The electrical and mechanical characteristics of the composite contacts were stable after hundreds of hours of annealing in air at 350°C. We report the effects of thermal aging on the specific contact resistance and the semiconductor sheet resistance, and the results of wire bond pull and shear tests following aging for Ta-Si-N / Pt / Au stacks deposited on both SiO2 dielectric layers and the ohmic contact layers.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
879-882
DOI
10.4028/www.scientific.net/MSF.527-529.879
Citation
A.V. Adedeji, A. C. Ahyi, J. R. Williams, M.J. Bozack, S.E. Mohney, B. Liu, J. D. Scofield, "Composite Ohmic Contacts to SiC", Materials Science Forum, Vols. 527-529, pp. 879-882, 2006
Online since
October 2006
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