Paper Title:
Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices
  Abstract

One important challenge in SiC Bipolar Junction Transistor (BJT) fabrication is to form good ohmic contacts to both n-type and p-type SiC. In this paper, we have examined contact study in a SiC BJT process with sputter deposition of titanium tungsten contacts to both n-type and p-type regions followed by annealing at different temperatures between 750 oC and 950 oC. The contacts were characterized using linear transmission line method (LTLM) structures. To see the formation of compound phases, X-ray Diffraction (XRD) θ-2θ scans were performed before and after annealing. The results indicate that 5 minutes annealing at 950 oC of the n+ contact is sufficient whereas the p+ contacts remain non-ohmic after 30 minutes annealing. The n+ emitter structure contact resistivity after 5 min annealing with 750 oC and 950 oC was 1.08 × 10-3 5cm2 and 4.08 × 10-4 5cm2, respectively. Small amorphous regions of silicon and carbon as well as titanium tungsten carbide regions were observed by high-resolution transmission electron microscopy (HRTEM), whereas less carbide formation and no amorphous regions were found in a sample with unsuccessful formation of TiW ohmic contacts.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
887-890
DOI
10.4028/www.scientific.net/MSF.527-529.887
Citation
H. S. Lee, M. Domeij, C. M. Zetterling, M. Östling, J. Lu, "Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices", Materials Science Forum, Vols. 527-529, pp. 887-890, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Arash Salemi, Hossein Elahipanah, Carl Mikael Zetterling, Mikael Östling
4.4 HV Devices
Abstract:The influence of varying the emitter-base geometry, i.e., the emitter width (WE), emitter contact–emitter edge distance...
958