Paper Title:
Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies
  Abstract

We have used depth-resolved cathodoluminescence and Auger electron spectroscopies, DRCLS and AES, respectively, to probe the electronic structure and the composition of Ti/Al ohmic contacts to p-type SiC on a nanometer scale. A continuous Ti-Si-C compound layer was observed using the Auger depth profile. No interfacial Al segregation was found. The secondary electron threshold technique showed a continuous decrease in work function from the p-type SiC to the Ti-Si-C compound layer. Our results support an ohmic contact mechanism by an intermediate semiconductor layer which reduces the otherwise large interfacial Schottky barrier height. DRCLS revealed a ~2.78 eV sub-band gap transition enhanced by interfacial reaction in the near-interface SiC, suggesting the formation of additional C or Si vacancies.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
891-894
DOI
10.4028/www.scientific.net/MSF.527-529.891
Citation
M. Gao, S. P. Tumakha, T. Onishi, S. Tsukimoto, M. Murakami, L. J. Brillson, "Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies", Materials Science Forum, Vols. 527-529, pp. 891-894, 2006
Online since
October 2006
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$32.00
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