Paper Title:
Ohmic Contacts on p-Type SiC Using Al/C Films
  Abstract

Al based alloys, such as Ti/Al, are commonly used for ohmic contacts on p-type SiC. The interfacial structures of a metal alloy film on SiC are very complicated after annealing. Al is considered as the key element responsible for forming ohmic contacts on p-type SiC, and reacts with C from SiC and forms Al4C3 and Si during annealing. In this study, we have investigated ohmic contact formation of a single component Al4C3 film on p-type SiC. Based on the stoichiometric formation of Al4C3 between Al and C at high temperatures, several samples with various Al/C mole ratios have been examined for ohmic contact formation after different annealing temperatures. Carbon rich and stoichiometric Al4C3 films form ohmic contacts on p-type 4H-SiC (~2.8 x1018 cm-3 ) after annealing at 800 and 900°C. X-ray diffraction (XRD) data have shown that a single component Al4C3 is formed when an ohmic contact on p-type SiC is activated. Al/SiC, as the control sample, does not form ohmic contacts under the same conditions. This study reveals that Al4C3 can be responsible for forming ohmic contacts on p-type SiC. However, its chemical instability requires that the secondary metal is necessary to form stable ohmic contacts when Albased films are used.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
899-902
DOI
10.4028/www.scientific.net/MSF.527-529.899
Citation
W. J. Lu, G.R. Landis, W.E. Collins, W.C. Mitchel, "Ohmic Contacts on p-Type SiC Using Al/C Films", Materials Science Forum, Vols. 527-529, pp. 899-902, 2006
Online since
October 2006
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