The Spatial Distribution of Defects and Its Dependence on Seed Polarity and Off-Orientation during Growth of 4H-SiC Single Crystals |
| Journal |
Materials Science Forum (Volumes 527 - 529) |
| Volume |
Silicon Carbide and Related Materials 2005 |
| Edited by |
Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages |
9-14 |
| DOI |
10.4028/www.scientific.net/MSF.527-529.9 |
| Online since |
October, 2006 |
| Authors |
H. J. Rost,
M. Schmidbauer,
D. Siche
|
| Keywords |
Bulk Growth, Defect Distribution, Orientation Dependency, Polarity |
| Abstract |
The defect distribution in 4H-SiC single crystals in dependence on the seed polarity and
its off-orientation was investigated by KOH-etching, optical microscopy and X-ray topography.
Micropipe density, stacking fault density and dislocation density were determined for 2” crystals
grown in <000-1> direction 0 - 7° off towards <11-20> and for crystals up to 1” in diameter grown
in <11-20> or a- and <1-100> or m-directions and using repeated a-face growth. For the growth in
polar directions the micropipe density and dislocation density decrease with increasing offorientation
of the seed. A similar behavior was found for the stacking fault density and dislocation
density in non-polar directions with off-orientation to c-direction. Nevertheless, while the
dislocation density could be reduced up to three orders of magnitude for the growth along non-polar
directions, the stacking fault density was continuously increasing. Additionally, the defect
distribution after repeated a-face growth will be discussed in terms of growth related and kinetic
models. |
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