Paper Title:
A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC
| Periodical | Materials Science Forum (Volumes 527 - 529) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 911-914 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.911 |
| Citation | D.J. Ewing et al., 2006, Materials Science Forum, 527-529, 911 |
| Online since | October, 2006 |
| Authors | D.J. Ewing, Qamar-ul Wahab, Sergey P. Tumakha, Leonard J. Brillson, X.Y. Ma, Tangali S. Sudarshan, L.M. Porter |
| Keywords | Defect, Depth-Resolved Cathodoluminescence, Inhomogeneity, Polarized Light Microscopy, Schottky Contact, X-Ray Topography |
| Price | US$ 28,- |
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Abstract
In this study, we performed a statistical analysis of 500 Ni Schottky diodes distributed across a 2-inch, n-type 4H-SiC wafer with an epilayer grown by chemical vapor deposition. A majority of the diodes displayed ideal thermionic emission when under forward bias, whereas some diodes showed ‘double-barrier’ characteristics with a ‘knee’ in the low-voltage log I vs. V plot. X-ray topography (XRT) and polarized light microscopy (PLM) revealed no correlations between screw dislocations and micropipes and the presence of double-barrier diodes. Depth resolved cathodoluminescence (DRCLS) indicated that certain deep-level states are associated with the observed electrical variations.
