Paper Title:
A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC
  Abstract

In this study, we performed a statistical analysis of 500 Ni Schottky diodes distributed across a 2-inch, n-type 4H-SiC wafer with an epilayer grown by chemical vapor deposition. A majority of the diodes displayed ideal thermionic emission when under forward bias, whereas some diodes showed ‘double-barrier’ characteristics with a ‘knee’ in the low-voltage log I vs. V plot. X-ray topography (XRT) and polarized light microscopy (PLM) revealed no correlations between screw dislocations and micropipes and the presence of double-barrier diodes. Depth resolved cathodoluminescence (DRCLS) indicated that certain deep-level states are associated with the observed electrical variations.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
911-914
DOI
10.4028/www.scientific.net/MSF.527-529.911
Citation
D.J. Ewing, Q. Wahab, S. P. Tumakha, L. J. Brillson, X.Y. Ma, T. S. Sudarshan, L.M. Porter, "A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 911-914, 2006
Online since
October 2006
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