Paper Title:
Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC
  Abstract

The Schottky barrier height (SBH) of Al, Ti, Au, and Ni contacts to n- and p-type 3C-SiC is investigated by means of I-V and C-V measurements. All metal contacts to n- (net donor concentration: 1.0 x 1016 /cm3) and p-type (net acceptor concentration: 4 x 1016 /cm3) 3C-SiC show the rectifying I-V characteristics except for Al contact to n-type 3C-SiC. Only Al contact to n-type 3C-SiC shows the ohmic characteristics. As the work function of metal is increased from 4.3 (Ti) to 5.2 (Ni) eV, SBH for n-type 3C-SiC is increased from 0.4 to 0.7 eV and SBH for p-type 3C-SiC is decreased from 2.2 to 1.8 eV. The small change of SBH for 3C-SiC may be correlated to the crystal orientation and the defects on the surface of 3C-SiC.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
923-926
DOI
10.4028/www.scientific.net/MSF.527-529.923
Citation
M. Satoh, H. Matsuo, "Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC", Materials Science Forum, Vols. 527-529, pp. 923-926, 2006
Online since
October 2006
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Price
$32.00
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