Paper Title:
Polytype Control in 6H-SiC Grown via Sublimation Method
  Abstract

6H-SiC ingots were grown with different growth interfaces at different rates via the sublimation method. A model for the step flow growth mechanism is proposed to interpret the occurrence of 15R-SiC inclusions in the 6H-SiC single crystal. The results show that the 15R-SiC occurs more easily on the convex and the concave interface than on the slight convex interface and 15R-SiC inclusion also occurs when the growth rate of 6H-SiC exceeds the critical rate of 300 %m/h with the slight convex interface at the seed temperature 2250°C.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
95-98
DOI
10.4028/www.scientific.net/MSF.527-529.95
Citation
X. X. Li, S. Z. Jiang, X. B. Hu, J. Dong, J. Li, X. F. Chen, L. Wang, X. G. Xu, M. H. Jiang, "Polytype Control in 6H-SiC Grown via Sublimation Method", Materials Science Forum, Vols. 527-529, pp. 95-98, 2006
Online since
October 2006
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$32.00
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