Polytype Control in 6H-SiC Grown via Sublimation Method |
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| Journal | Materials Science Forum (Volumes 527 - 529) |
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| Volume | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 95-98 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.95 |
| Citation | Xian Xiang Li et al., 2006, Materials Science Forum, 527-529, 95 |
| Online since | October, 2006 |
| Authors | Xian Xiang Li, Shou Zhen Jiang, Xiao Bo Hu, Jie Dong, Juan Li, Xiu Fang Chen, Li Wang, Xian Gang Xua, Min Hua Jiang |
| Keywords | Growth Interface, Growth Rate, Polytype, Step Flow Growth Mechanism |
| Abstract | 6H-SiC ingots were grown with different growth interfaces at different rates via the sublimation method. A model for the step flow growth mechanism is proposed to interpret the occurrence of 15R-SiC inclusions in the 6H-SiC single crystal. The results show that the 15R-SiC occurs more easily on the convex and the concave interface than on the slight convex interface and 15R-SiC inclusion also occurs when the growth rate of 6H-SiC exceeds the critical rate of 300 %m/h with the slight convex interface at the seed temperature 2250°C. |
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