Paper Title:
Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient
  Abstract

Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the silicon carbide-silicon dioxide interface. In this work a comparison between a wet oxidation and an oxidation in N2O ambient diluted in N2 is proposed. The interface state density Dit near the conduction-band edge of SiC has been evaluated by conventional C-V measurements obtaining results similar or better than the literature data. Furthermore, the slow trapping phenomena have been studied and preliminary results are reported.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
979-982
DOI
10.4028/www.scientific.net/MSF.527-529.979
Citation
A. Poggi, F. Moscatelli, A. Scorzoni, G. Marino, R. Nipoti, M. Sanmartin, "Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient", Materials Science Forum, Vols. 527-529, pp. 979-982, 2006
Online since
October 2006
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