Paper Title:
Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC
  Abstract

4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of N2O-grown thermal oxides. The oxide breakdown field reduces from 9.5 MV/cm with wet etching to saturate at 9.0 MV/cm with 30% reactive-ion over-etching. Additionally, the conduction-band offset barrier height, φB, progressively decreases from 2.51 eV with wet etching to 2.46 eV with 45% reactive-ion over-etching.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
983-986
DOI
10.4028/www.scientific.net/MSF.527-529.983
Citation
K. Matocha, C. S. Cowen, R. Beaupre, J. B. Tucker, "Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 983-986, 2006
Online since
October 2006
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Price
$32.00
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