Paper Title:
Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces
  Abstract

A near-surface Gaussian nitrogen (N) profile is implanted into the Si- or C-face of n-/ptype 4H-SiC epilayers prior to a standard oxidation process. The corresponding MOS capacitors are investigated by conductance and internal photoemission spectroscopy. The effect of N-implantation on the density of interface traps Dit is studied and a model is proposed, which consistently explains the observed results.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
991-994
DOI
10.4028/www.scientific.net/MSF.527-529.991
Citation
F. Ciobanu, T. Frank, G. Pensl, V. V. Afanas'ev, S. Shamuilia, A. Schöner, T. Kimoto, "Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces", Materials Science Forum, Vols. 527-529, pp. 991-994, 2006
Online since
October 2006
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Price
$32.00
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