Paper Title:
Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC
  Abstract

Low-temperature post-oxidation annealing (POA) process of high-reliability thermal oxides grown on 4H-SiC using new apparatus that generates atomic hydrogen radicals by high-temperature catalyzer has been investigated. Atomic hydrogen radicals were generated by thermal decomposition of H2 gas at the catalyzer surface heated at high temperature of 1800°C, and then exposed to the sample at 500°C in reactor pressure of 20 Pa. The mode and maximum values of field-to-breakdown are 11.0 and 11.2 MV/cm, respectively, for the atomic hydrogen radical exposed sample. In addition, the charge-to-breakdown at 63% cumulative failure of the thermal oxides for atomic hydrogen radical exposed sample was 0.51 C/cm2, which was higher than that annealed at 800°C in hydrogen atmosphere (0.39 C/cm2). Consequently, the atomic hydrogen radical exposure at 500°C has remarkably improved the reliability of thermal oxides on 4H-SiC wafer, and is the same effect with high-temperature hydrogen POA at 800°C.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
999-1002
DOI
10.4028/www.scientific.net/MSF.527-529.999
Citation
J. Senzaki, A. Shimozato, K. Fukuda, "Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 999-1002, 2006
Online since
October 2006
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$32.00
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