Paper Title
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Authors: Maryse Lancin, G. Regula, Joël Douin, Hosni Idrissi, Laurent Ottaviani, Bernard Pichaud
Abstract:Defects are introduced into (11-20) highly N-doped 4H-SiC by one surface scratch followed by annealing at 550°C or 700°C with or without an...
379
Authors: Mark E. Twigg, Robert E. Stahlbush, Peter A. Losee, Can Hua Li, I. Bhat, T. Paul Chow
Abstract:Using light emission imaging (LEI), we have determined that not all planar defects in 4H-SiC PiN diodes expand in response to bias....
383
Authors: Kendrick X. Liu, Robert E. Stahlbush, Karl D. Hobart, Joseph J. Sumakeris
Abstract:With a simple processing sequence using only patterned aluminum (Al), dislocations and stacking faults were examined in thick n- epitaxial...
387
Authors: Nicolas Camara, Konstantinos Zekentes, Edwige Bano, Aurelie Thuaire, Alexander A. Lebedev
Abstract:4H-SiC pin diodes were fabricated on epitaxial layers grown by Sandwich Sublimation Method (SSM). I-V and photoemission measurements were...
391
Authors: Augustinas Galeckas, Anders Hallén, Adolf Schöner, Jan Linnros, P. Pirouz
Abstract:We investigate the possibility of controlling formation of stacking faults (SFs) at the interface region by implanting the 4H-SiC substrate...
395
Authors: Tatsuya Okada, Kouichi Okamoto, Kengo Ochi, Kouichi Higashimine, Tsunenobu Kimoto
Abstract:Plan-view transmission electron microscopy (TEM) was applied to investigate the origin of surface defects in 4H-SiC homoepitaxial films....
399
Authors: Jae Won Lee, Marek Skowronski
Abstract:The structure of the “star” defect in 4H-SiC substrates and its effects on the extended defect structures in the epilayers were studied by...
403
Authors: Satoshi Yamaguchi, Daisuke Nakamura, Itaru Gunjishima, Yoshiharu Hirose
Abstract:The detailed properties of the dislocations of SiC crystals were analyzed using ultrahigh-quality substrates manufactured by RAF (repeated...
407
Authors: William M. Vetter, Hidekazu Tsuchida, Isaho Kamata, Michael Dudley
Abstract:Among the types of dislocation seen in homo-epilayers of SiC grown upon 4H-SiC wafers with an 8° surface offcut are basal plane dislocations...
411
Authors: Isaho Kamata, Hidekazu Tsuchida, Toshiyuki Miyanagi, Tomonori Nakamura
Abstract:We have developed non-destructive in-house observation techniques for dislocations and stacking faults (SFs) in 4H-SiC epilayers. Low...
415
Showing 91 to 100 of 379 Paper Titles