Paper Title
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Authors: Ze Hong Zhang, Amitesh Shrivastava, Tangali S. Sudarshan
Abstract:Dislocations were tracked from 4H-SiC epilayer to the substrate by a new method based on combination of molten KOH etching and Reactive Ion...
419
Authors: Y. Yanagisawa, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki
Abstract:Propagations of dislocations in 4H-SiC were evaluated three-dimensionally by a planar mapping EBIC method with the control of accelerating...
423
Authors: Stanislav I. Soloviev, Peter M. Sandvik, Steve Arthur, Kevin Matocha, S.I. Maximenko, Tangali S. Sudarshan
Abstract:In this work, we investigated the effect of crystal defects on reverse I-V characteristics of avalanche photodiodes (APDs) using...
427
Authors: Michael A. Capano, A.R. Smith, Byeung C. Kim, E.P. Kvam, S. Tsoi, A.K. Ramdas, James A. Cooper
Abstract:3C-SiC p-type epilayers were grown to thicknesses of 1.5, 3, 6 and 10 μm on 2.5° off-axis Si(001) substrates by chemical vapor deposition...
431
Authors: Etienne Pernot, J. Härtwig, Michel Pons, Roland Madar
Abstract:Recently, in some silicon carbide single crystals, some micropipes associated with screw dislocation have been observed by X-ray topography...
435
Authors: S.I. Maximenko, P. Pirouz, Tangali S. Sudarshan
Abstract:More than fifty years ago Frank proposed that a dislocation with a Burgers vector larger than a critical value would have an open core....
439
Authors: Ejiro Emorhokpor, E.P. Carlson, Jian Wei Wan, Arnd Dietrich Weber, C. Basceri, Jason R. Jenny, R. Sandhu, James D. Oliver, F. Burkeen, A. Somanchi, V. Velidandla, F. Orazio, A. Blew, M.S. Goorsky, Michael Dudley, William M. Vetter
Abstract:Micropipe density (MPD) is a crucial parameter for silicon carbide (SiC) substrates that determines the quality, stability and yield of the...
443
Authors: Jian Wei Wan, Seung Ho Park, Gil Yong Chung, E.P. Carlson, Mark J. Loboda
Abstract:Micropipes are considered to be a major device killer in SiC wafers. Developing a method to count and map micropipes efficiently and...
447
Authors: Jie Dong, Li Wang, Xiao Bo Hu, Xian Xiang Li, Juan Li, Shou Zhen Jiang, Xiu Fang Chen, Xian Gang Xu, Min Hua Jiang
Abstract:4H-SiC single crystal with a diameter of 1.5’’ has been grown by the seed sublimation method. Regions of mixed polytypes are assessed by...
451
Authors: Björn Magnusson, Reino Aavikko, Kimmo Saarinen, Nguyen Tien Son, Erik Janzén
Abstract:Semi-insulating SiC grown by the HTCVD technique are studied by luminescence and absorption measurements and the results are compared to PAS...
455
Showing 101 to 110 of 379 Paper Titles