Paper Title
Page
Authors: Aurelie Thuaire, Anne Henry, Björn Magnusson, Peder Bergman, W.M. Chen, Erik Janzén, Michel Mermoux, Edwige Bano
Abstract:A detailed investigation of the optical and electronic properties of the deep-level defect UD-4 is reported. This defect has recently been...
461
Authors: Alexander Mattausch, M. Bockstedte, Oleg Pankratov, John W. Steeds, S.A. Furkert, J.M. Hayes, W. Sullivan, Nicolas G. Wright
Abstract:We observe new photoluminescence centers in electron-irradiated 6H-SiC with phonon replicas up to 250 meV and clear threefold isotope...
465
Authors: K. Neimontas, Arunas Kadys, R. Aleksiejūnas, Kęstutis Jarašiūnas, Gil Yong Chung, Edward K. Sanchez, Mark J. Loboda
Abstract:We applied a non-degenerate four wave mixing (FWM) technique to investigate carrier generation, diffusion and recombination processes in...
469
Authors: John W. Steeds, S.A. Furkert, W. Sullivan, Günter Wagner
Abstract:The unusual behaviour of two optical centres with zero phonon lines close to 463nm has been investigated by means of low-temperature...
473
Authors: W. Sullivan, John W. Steeds, Hans Jürgen von Bardeleben, J.L. Cantin
Abstract:Several 4H SiC samples have been electron-irradiated at near threshold energies at low fluence, either along the [0001] or [000-1]...
477
Authors: W. Sullivan, John W. Steeds
Abstract:Samples of 4H SiC, both n- and p-doped, have been irradiated with low-energy electrons in a transmission electron microscope. The dependence...
481
Authors: Giovanni Alfieri, Ulrike Grossner, Edouard V. Monakhov, Bengt G. Svensson, John W. Steeds, W. Sullivan
Abstract:The migration of carbon interstitials in n-type 4H-SiC has been revealed with optical and electrical measurements. Furthermore, clear...
485
Authors: L. Storasta, Isaho Kamata, Tomonori Nakamura, Hidekazu Tsuchida
Abstract:We have investigated the electrically active deep level defects in p- and n-type 4H-SiC after low energy electron irradiation. Intrinsic...
489
Authors: Sung Wook Huh, Joseph J. Sumakeris, A.Y. Polyakov, Marek Skowronski, Paul B. Klein, B.V. Shanabrook, Michael J. O'Loughlin
Abstract:Carrier lifetimes and the dominant electron and hole traps were investigated in a set of thick (9-104mm) undoped 4H-SiC epitaxial layers...
493
Authors: Sung Wook Huh, A.Y. Polyakov, Hun Jae Chung, Saurav Nigam, Marek Skowronski, E.R. Glaser, W.E. Carlos, Mark A. Fanton, N.B. Smirnov
Abstract:Deep electron and hole traps were studied in a series of high purity 6H-SiC single crystals grown by Halide Chemical Vapor Deposition (HCVD)...
497
Showing 111 to 120 of 379 Paper Titles