Paper Title
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Authors: Katsunori Danno, Tsunenobu Kimoto
Abstract:Deep levels in as-grown p-type 4H-SiC epilayers have been investigated by DLTS. Three deep hole traps (HK2, HK3 and HK4) can be detected by...
501
Authors: W.C. Mitchel, William D. Mitchell, S.R. Smith, G.R. Landis, A.O. Evwaraye, Z.Q. Fang, David C. Look, J.R. Sizelove
Abstract:A variety of 4H-SiC samples from undoped crystals grown by the physical vapor transport technique have been studied by temperature dependent...
505
Authors: Z.Q. Fang, B. Claflin, David C. Look, L. Polenta, J. Chen, Thomas Anderson, W.C. Mitchel
Abstract:Thermally stimulated current spectroscopy (TSC) has been applied to characterize deep traps in high-purity semi-insulating 6H-SiC...
509
Authors: M. Duisenbaev
Abstract:In this paper superlinear dependence in the intensity–current characteristic, optical and temperature quenching of photocurrent and...
513
Authors: Mary Ellen Zvanut, Won Woo Lee, Hai Yan Wang, W.C. Mitchel, William D. Mitchell
Abstract:The high resistivity of SiC required for many device applications is achieved by compensating residual donors or acceptors with vanadium or...
517
Authors: Adam Gali, M. Bockstedte, Nguyen Tien Son, T. Umeda, Junichi Isoya, Erik Janzén
Abstract:Only recently the well-resolved hyperfine structure of the P6/P7 EPR center has been experimentally observed. Based on the calculated...
523
Authors: Nguyen Tien Son, T. Umeda, Junichi Isoya, Adam Gali, M. Bockstedte, Björn Magnusson, Alexsandre Ellison, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Erik Janzén
Abstract:Electron paramagnetic resonance (EPR) studies of the P6/P7 centers in 4H- and 6H-SiC are reported. The obtained principal values of the...
527
Authors: W.E. Carlos, E.R. Glaser, N.Y. Garces, B.V. Shanabrook, Mark A. Fanton
Abstract:High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron...
531
Authors: Ivan V. Ilyin, Marina V. Muzafarova, E.N. Mokhov, Vladimir Ilich Sankin, P.G. Baranov, S.B. Orlinskii, J. Schmidt
Abstract:P6 and P7 centers, which are responsible for semi-insulating properties of SiC, were shown to be neutral Si-C divacancies (VSi-VC)o having a...
535
Authors: M. Bockstedte, Adam Gali, T. Umeda, Nguyen Tien Son, Junichi Isoya, Erik Janzén
Abstract:The negative carbon vacancy antisite complex is analysed by ab initio theory in view of the SI5 EPR-center. The complex occurs in a...
539
Showing 121 to 130 of 379 Paper Titles