Paper Title
Authors: P. Soukiassian, M. Silly, C. Radtke, H. Enriquez, M. D'Angelo, V. Derycke, V.Yu. Aristov, F. Amy, Y.J. Chabal, P. Moras, M. Pedio, S. Gardonio, C. Ottaviani, P. Perfetti
Authors: W.Y. Lee, S. Soubatch, Ulrich Starke
Abstract:The atomic structure of the 4H-SiC(11 2 0) surface including possible phase transformations via Si deposition and annealing has been...
Authors: Ulrich Starke, W.Y. Lee, Camilla Coletti, Stephen E. Saddow, Robert P. Devaty, Wolfgang J. Choyke
Abstract:The morphology and atomic structure of 4H-SiC(1102) and 4H-SiC(1102) surfaces, i.e. the surfaces found in the triangular channels of porous...
Authors: Morten Kildemo, Ulrike Grossner, M. Juel, B. Samuelsen, Bengt G. Svensson, S. Raaen
Authors: Christian Förster, Ratislav Kosiba, Gernot Ecke, Volker Cimalla, Oliver Ambacher, Jörg Pezoldt
Abstract:The effects of argon and nitrogen bombardment of 3C-SiC surfaces at acceleration voltages below 2 keV were studied by stylus profilometry,...
Authors: Dieter Strauch, B. Dorner, A.A. Ivanov, M. Krisch, J. Serrano, A. Bosak, Wolfgang J. Choyke, B. Stojetz, Michael Malorny
Abstract:Preliminary results for the phonon dispersion curves of hexagonal 4H-SiC from experimental inelastic neutron (INS) and X-ray scattering...
Authors: Zhe Chuan Feng, C.W. Huang, W.Y. Chang, Jie Zhao, Chin Che Tin, Wei Jie Lu, W.E. Collins
Abstract:We have performed a combined investigation of experiment and theory on the infrared reflectance from cubic SiC grown on Si by chemical vapor...
Authors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani
Abstract:The coefficient of thermal expansion (CTE) of SiC single crystals is important, in particular, for both designing device assembly and...
Authors: V. Anjos, M.J.V. Bell, Elder A. de Vasconcelos, E.F. da Silva Jr., A.A. Andrade, R.W.A. Franco, M.P.P. Castro, I.A. Esquef, Roberto da Trindade Faria Jr.
Abstract:In this paper we combine the use of photo-thermal techniques, Thermal lens (TL) spectrometry, Photoacoustic and heat capacity measurements...
Authors: Vladimir Ilich Sankin, Rositza Yakimova
Abstract:The work deals with the highly important problem of the qualitative temperature dependence of avalanche breakdown voltage in p-n junctions...
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