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Silicon Carbide and Related Materials 2005

Materials Science Forum Volumes 527 - 529

• Papers
• Abstracts

• p119 Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique   [ 701 K ]
  Authors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Nobuyoshi Yashiro, Akihiro Yauchi, Toru Ujihara, Kazuo Nakajima
• p123 Growth of Cubic Silicon Carbide Crystals from Solution   [ 175 K ]
  Authors: Jessica Eid, Jean Louis Santailler, Bernard Ferrand, Pierre Ferret, J. Pesenti, Alain Basset, Antoine Passero, Alkyoni Mantzari, Efstathios K. Polychroniadis, Carole Balloud, P. Soares, Jean Camassel
• p129 Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling   [ 136 K ]
  Authors: Shinichi Nishizawa, Michel Pons
• p135 Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs   [ 475 K ]
  Authors: Bernd Thomas, Christian Hecht, René A. Stein, Peter Friedrichs
• p141 Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V_f Drift in SiC Bipolar Power Devices   [ 976 K ]
  Authors: Joseph J. Sumakeris, J. Peder Bergman, Mrinal K. Das, Christer Hallin, Brett A. Hull, Erik Janzén, H. Lendenmann, Michael J. O'Loughlin, Michael J. Paisley, Seo Young Ha, Marek Skowronski, John Palmour, Calvin H. Carter Jr.
• p147 Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers   [ 1 M ]
  Authors: Kazutoshi Kojima, Tomohisa Kato, Satoshi Kuroda, Hajime Okumura, Kazuo Arai
• p153 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness   [ 372 K ]
  Authors: Takashi Aigo, M. Sawamura, Tatsuo Fujimoto, Masakazu Katsuno, Hirokatsu Yashiro, Hiroshi Tsuge, Masashi Nakabayashi, Taizo Hoshino, Noboru Ohtani
• p159 SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers   [ 227 K ]
  Authors: Albert A. Burk, Michael J. O'Loughlin, Michael J. Paisley, Adrian R. Powell, M.F. Brady, R.T. Leonard, D.A. McClure
• p163 Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process   [ 168 K ]
  Authors: Francesco La Via, G. Galvagno, A. Firrincieli, Fabrizio Roccaforte, Salvatore Di Franco, Alfonso Ruggiero, Milo Barbera, Ricardo Reitano, Paolo Musumeci, Lucia Calcagno, Gaetano Foti, Marco Mauceri, Stefano Leone, Giuseppe Pistone, F. Portuese, Giuseppe Abbondanza, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa
• p167 Lower-Temperature Epitaxial Growth of 4H-SiC Using CH₃Cl Carbon Gas Precursor   [ 199 K ]
  Authors: Yaroslav Koshka, Huang De Lin, Galyna Melnychuk, Colin Wood
• p171 Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH₃Cl Carbon Precursor   [ 336 K ]
  Authors: Huang De Lin, Jeffery L. Wyatt, Yaroslav Koshka
• p175 Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor   [ 1 M ]
  Authors: Mike F. MacMillan, Mark J. Loboda, Gil Yong Chung, E.P. Carlson, Jian Wei Wan
• p179 SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor   [ 484 K ]
  Authors: Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, F. Portuese, Giovanni Abagnale, Gian Luca Valente, Danilo Crippa, Milo Barbera, Ricardo Reitano, Gaetano Foti, Francesco La Via
• p183 Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates   [ 590 K ]
  Authors: Jawad ul Hassan, Christer Hallin, J. Peder Bergman, Erik Janzén
• p187 High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD   [ 553 K ]
  Authors: Rachael L. Myers-Ward, Y. Shishkin, Olle Kordina, I. Haselbarth, Stephen E. Saddow