Paper Title
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Authors: Masataka Satoh, Tomoyuki Suzuki
Abstract:The impurity concentration dependence of the recrystallization rate of phosphorus implanted 4H-SiC(11-20) has been investigated by means of...
799
Authors: Akimasa Kinoshita, Junji Senzaki, Makoto Katou, Shinsuke Harada, Mitsuo Okamoto, Shin Ichi Nishizawa, Kenji Fukuda, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima
Abstract:We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA)...
803
Authors: Masami Shibagaki, Masataka Satoh, Yasumi Kurematsu, Kenji Numajiri, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Tomoyuki Suzuki, Shohei Miyagawa
Abstract:We developed EBAS-100, which is available to 100 mm diameter SiC wafer, for post ion implantation annealing in order to realize silicon...
807
Authors: Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi
Abstract:This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature...
811
Authors: Roberta Nipoti, Fabio Bergamini, Francesco Moscatelli, Antonella Poggi, Mariaconcetta Canino, Giuseppe Bertuccio
Abstract:An n-type 8° off-axis <0001> 4H-SiC epitaxial wafer was processed. The n-type epilayer had doping and thickness of, respectively, ~3 × 1015...
815
Authors: Fabio Bergamini, Shailaja P. Rao, Antonella Poggi, Fabrizio Tamarri, Stephen E. Saddow, Roberta Nipoti
Abstract:This work reports the realization and characterization of 4H-SiC p+/n diodes with the p+ anodes made by Al+ ion implantation at 400°C and...
819
Authors: Martin Rambach, Lothar Frey, Anton J. Bauer, Heiner Ryssel
Abstract:Characterization of post implantation annealing steps is done by extracting the activation and compensation data of implanted Al atoms....
827
Authors: Kenneth A. Jones, T.S. Zheleva, Pankaj B. Shah, Michael A. Derenge, Jaime A. Freitas, G.J. Gerardi, R.D. Vispute, Shiva S. Hullavarad, S. Dar
Abstract:SiC samples implanted at 600°C with 1018, 1019, or 1020 cm-3 of Al to a depth of ~ 0.3 μm and annealed with a (BN)AlN cap at temperatures...
831
Authors: Akimasa Kinoshita, Makoto Katou, Miwa Kawasaki, Kazutoshi Kojima, Kenji Fukuda, Kazuo Arai, Fukuyoshi Morigasa, Tomoyoshi Endou, Takuo Isii, Teruyuki Yashima
Abstract:We investigate the effect of surface orientation and off-angle for Al-implanted 4H-SiC samples after high temperature annealing. The samples...
835
Showing 191 to 200 of 379 Paper Titles