Paper Title
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Authors: A.V. Adedeji, Ayayi Claude Ahyi, John R. Williams, M.J. Bozack, S.E. Mohney, B. Liu, James D. Scofield
Abstract:Composite ohmic contacts designed for SiC devices operating in air at 350°C have been studied. Ohmic contacts to n- and p-4H-SiC were...
879
Authors: S.H. Wang, Owen Arnold, C.M. Eichfeld, S.E. Mohney, A.V. Adedeji, John R. Williams
Abstract:Tantalum-ruthenium diffusion barriers for contacts to SiC were investigated in this work. Stable specific contact resistances of (2 ± 1) x...
883
Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Jun Lu
Abstract:One important challenge in SiC Bipolar Junction Transistor (BJT) fabrication is to form good ohmic contacts to both n-type and p-type SiC....
887
Authors: M. Gao, Sergey P. Tumakha, T. Onishi, Susumu Tsukimoto, Masanori Murakami, Leonard J. Brillson
Abstract:We have used depth-resolved cathodoluminescence and Auger electron spectroscopies, DRCLS and AES, respectively, to probe the electronic...
891
Authors: John Crofton, John R. Williams, A.V. Adedeji, James D. Scofield, S. Dhar, Leonard C. Feldman, M.J. Bozack
Abstract:Nickel ohmic contacts to p-type epitaxial and heavily implanted 4H-SiC are described. Room and elevated temperature results are presented....
895
Authors: Wei Jie Lu, G.R. Landis, W.E. Collins, W.C. Mitchel
Abstract:Al based alloys, such as Ti/Al, are commonly used for ohmic contacts on p-type SiC. The interfacial structures of a metal alloy film on SiC...
899
Authors: Bang Hung Tsao, Jacob Lawson, James D. Scofield
Abstract:AlNi and Ni2Si based ohmic contacts to p-type 4H-SiC have been produced using low energy ion implantation, a Ti contact layer, and...
903
Authors: Sergey P. Tumakha, L.M. Porter, D.J. Ewing, Qamar-ul Wahab, X.Y. Ma, Tangali S. Sudarshan, Leonard J. Brillson
Abstract:We have used depth-resolved cathodoluminescence spectroscopy (DRCLS) to correlate subsurface deep level emissions and double barrier...
907
Authors: D.J. Ewing, Qamar-ul Wahab, Sergey P. Tumakha, Leonard J. Brillson, X.Y. Ma, Tangali S. Sudarshan, L.M. Porter
Abstract:In this study, we performed a statistical analysis of 500 Ni Schottky diodes distributed across a 2-inch, n-type 4H-SiC wafer with an...
911
Authors: Y. Wang, M.K. Mikhov, B.J. Skromme
Abstract:The impact of high temperature annealing using graphite encapsulation (formed by baking photoresist) on the electrical properties of Ni...
915
Showing 211 to 220 of 379 Paper Titles