Paper Title
Page
Authors: J.L. Cantin, Hans Jürgen von Bardeleben
Abstract:Previous Electron Paramagnetic Resonance (EPR) studies identified the carbon dangling bond center as the main paramagnetic interface defect...
1015
Authors: Christoph Thill, Jan Knaup, Peter Deák, Thomas Frauenheim, Wolfgang J. Choyke
Abstract:The high density of interface electron traps in the SiC/SiO2 system, near the conduction band of 4H-SiC, is often ascribed to graphitic...
1019
Authors: S. Nie, R.M. Feenstra
Abstract:Scanning tunneling microscopy and spectroscopy have been used to study the electronic states of oxidized 6H-SiC interfaces. The SiC surfaces...
1023
Authors: Owen J. Guy, L. Chen, G. Pope, K.S. Teng, T. Maffeis, S.P. Wilks, Philip A. Mawby, T.E. Jenkins, A. Brieva, D.J. Hayton
Abstract:The investigation of the silicon carbide surface after a sacrificial silicon oxidation technique is reported. Oxidation of SiC is a...
1027
Authors: K. Kakubari, R. Kuboki, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
Abstract:Real time observation of SiC oxidation was performed using an in-situ ellipsometer over the temperature range from 900°C to 1150°C. The...
1031
Authors: A.M. Hoff, E. Oborina
Abstract:Non-contact corona-voltage metrology is utilized to characterize as-grown thermal oxide films on 4H SiC substrates. Contact potential...
1035
Authors: Ruby N. Ghosh, Reza Loloee, Tamara Isaacs-Smith, John R. Williams
Abstract:SiC based field-effect devices are attractive for electronic and sensing applications above 250 °C. At these temperatures the reliability of...
1039
Authors: Kenji Fukuda, Makoto Kato, Shinsuke Harada, Kazutoshi Kojima
Abstract:SiC power MOSFETs are expected to be normally-off type fast switching devices. The on-resistance of SiC power MOSFETs is much higher than...
1043
Authors: Amador Pérez-Tomás, Phillippe Godignon, Jean Camassel, Narcis Mestres, Veronique Soulière
Abstract:4H-SiC MOSFET devices with low temperature dry thermal oxidation (1050 °C 1 h) and TEOS plasma enhanced CVD deposited oxides on 4H-SiC...
1047
Authors: Caroline Blanc, Dominique Tournier, Phillippe Godignon, D.J. Brink, Veronique Soulière, Jean Camassel
Abstract:We report on 4H-SiC MOSFET devices implemented on p-type <11-20>-oriented epitaxial layers, using a two-step procedure for gate oxide...
1051
Showing 241 to 250 of 379 Paper Titles